Enhanced ASIC process cell

Details Enhanced ASIC process cell Enhanced ASIC process cell

1997-04-07

1999-02-09

Nguyen, Tan T.

Static information storage and retrieval

Systems using particular element

Capacitors

365150, 257908, G11C 1124

Patent

active

058703292

ABSTRACT:
A DRAM bit storage cell comprising a pair of capacitors each having one plate connected to a source or drain of a pass FET, another plate of a first of the pair of capacitors connected to a first voltage rail or a source of voltage boosted from the voltage of the first voltage rail, and another plate of a second of the pair of capacitors connected to a voltage rail opposite in polarity to the first voltage rail.

REFERENCES:
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 5148393 (1992-09-01), Furuyama
patent: 5629888 (1997-05-01), Saito et al.

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