Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ordering or disordering
Reexamination Certificate
2006-05-30
2008-12-23
Smith, Bradley K (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ordering or disordering
C438S510000, C257SE21634
Reexamination Certificate
active
07468313
ABSTRACT:
A semiconductor fabrication process preferably used with a semiconductor on insulator (SOI) wafer. The wafer's active layer is biaxially strained and has first and second regions. The second region is amorphized to alter its strain component(s). The wafer is annealed to re-crystallize the amorphous semiconductor. First and second types of transistors are fabricated in the first region and the second region respectively. Third and possibly fourth regions of the active layer may be processed to alter their strain characteristics. A sacrificial strain structure may be formed overlying the third region. The strain structure may be a compressive. When annealing the wafer with the strain structure in place, its strain characteristics may be mirrored in the third active layer region. The fourth active layer region may be amorphized in stripes that run parallel to a width direction of the transistor strain to produce uniaxial stress in the width direction.
REFERENCES:
patent: 6689671 (2004-02-01), Yu et al.
patent: 6743687 (2004-06-01), Yu et al.
patent: 6831292 (2004-12-01), Currie et al.
patent: 6881632 (2005-04-01), Fitzgerald et al.
patent: 2004/0126998 (2004-07-01), Feudel et al.
patent: 2004/0142541 (2004-07-01), Cohen et al.
patent: 2005/0116360 (2005-06-01), Huang et al.
patent: 2005/0277260 (2005-12-01), Cohen et al.
patent: 2007/0045729 (2007-03-01), Hoentschel et al.
International Search Report and Written Opinion.
Thean Voon-Yew
Vartanian Victor H.
Winstead Brian A.
Freescale Semiconductor Inc.
Smith Bradley K
Vo Kim-Marie
LandOfFree
Engineering strain in thick strained-SOI substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Engineering strain in thick strained-SOI substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Engineering strain in thick strained-SOI substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4050331