Endpoint detection system and method for plasma etching

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156643, 156657, 156662, 156345, 20419233, 20429832, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

049542125

ABSTRACT:
A plasma etching endpoint detection system and method for plasma etching systems generates an endpoint signal when the etching system completes the etching of a designated layer on a semiconductor wafer and begins etching the layer below the designated layer. An impedance transformation circuit is tuned so that the selected tuning point has a predefined relationship to the point at which minimum power reflection occurs. As a result, when the etching system completes the etching of a designated layer, the amount of power reflected by the plasma etcher will change in a predefined fashion so as to facilitate the generation of an endpoint signal. In one embodiment, a tuning capacitor in the etcher's impedance transformation circuit is set at a level at which it is known that the amount of reflected power will increase when the designated layer has been completely etched. As a result, the intensity of light generated in the plasma will decrease at the endpoint of etching the designated layer. An optical sensor, which is tuned to a frequency at which light is generated while the designated layer is being etched, generates an endpoint signal when the emission intensity decreases below a specified level, and that endpoint signal is used to turn off the etcher's plasma power supply. In another embodiment, the plasma etcher's controller detects when the reflected power increases above a specified level, at which point it generates an endpoint signal that is used to turn off the etcher's plasma power supply.

REFERENCES:
patent: 4207137 (1980-06-01), Tretola
patent: 4357195 (1982-11-01), Gorin

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