Endpoint detection methods in plasma etch processes and apparatu

Details Endpoint detection methods in plasma etch processes and apparatu Endpoint detection methods in plasma etch processes and apparatu

1997-09-26

1999-10-12

Utech, Benjamin

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

438 9, 438 14, 438 18, 438710, 438714, H01L 2100

Patent

active

059665866

ABSTRACT:
Methods for determining an endpoint for a plasma etching process. The plasma etching process is employed to etch a substrate in a plasma processing chamber. The method includes detecting, using a mass analyzer, a density of a predefined compound in the plasma processing chamber. The method further includes outputting from the mass analyzer a variable signal responsive to the detecting. There is also included producing, responsive to the variable signal, a control signal. The control signal is outputted when a predefined density criteria is detected in the variable signal. Additionally, there is included initiating an etch termination procedure, responsive to the control signal, thereby ending the plasma etching process at an end of the etch termination procedure.

REFERENCES:
patent: 4415402 (1983-11-01), Gelernt et al.
patent: 4496425 (1985-01-01), Kuyel
patent: 5885472 (1999-03-01), Miyazaki et al.

Affiliated with

Also associated with

Rating

Endpoint detection methods in plasma etch processes and apparatu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Endpoint detection methods in plasma etch processes and apparatu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Endpoint detection methods in plasma etch processes and apparatu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-661677