Endpoint detection method and apparatus which utilize an endpoin

Details Endpoint detection method and apparatus which utilize an endpoin Endpoint detection method and apparatus which utilize an endpoin

1998-06-30

2000-06-06

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 438697, H01L 21302

Patent

active

060718188

ABSTRACT:
A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a catalyst material is discloes. One step of the method includes polishing a first side of the wafer in order to remove material from the wafer. Another step of the method includes determining that a catalytic reaction has occurred due to the polishing step removing the catalyst material of the polishing endpoint layer. The method also includes the step of terminating the polishing step in response to determining that the catalytic reaction has occurred. A polishing system is also disclosed which detects a polishing endpoint based upon a catalytic reaction triggered by a catalyst material of a polishing endpoint layer of a semiconductor device.

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