Endpoint detection method and apparatus which utilize a chelatin

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438693, H01L 21461, H01L 21302

Patent

active

061177792

ABSTRACT:
A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a ligand is disclosed. One step of the method includes polishing a first side of the wafer in order to remove the ligand from the wafer. Another step of the method includes determining that a chelating agent has bound the ligand due to the polishing step removing the ligand of the polishing endpoint layer. The method also includes the step of terminating the polishing step in response to determining that the chelating agent has bound the ligand. A polishing system is also disclosed which detects a polishing endpoint based upon a chelating agent binding a ligand of a polishing endpoint layer of a semiconductor device.

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