Endpoint detection method and apparatus

Details Endpoint detection method and apparatus Endpoint detection method and apparatus

1997-09-30

1999-09-21

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438735, 438737, 438738, 438740, H01L 2120

Patent

active

059553804

ABSTRACT:
Disclosed are metal fuse structures and methods for making the same. The method includes forming the fuse structure from a metallization layer. Depositing a bottom oxide layer, that is an HDP oxide, over the fuse structure that is formed from the metallization layer. Depositing a doped oxide layer over the base oxide layer. Depositing a top oxide layer over the doped oxide layer. Etching through the top oxide layer. Detecting an increased level of a dopant species that is emitted when the doped oxide layer begins to etch. The method further includes terminating the etching when the increased level of dopant species is detected. Wherein at least the bottom oxide layer remains over the fuse structure that is formed from the metallization layer.

REFERENCES:
patent: 5707901 (1998-01-01), Cho et al.
patent: 5869404 (1999-02-01), Kim et al.

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