Endpoint detection for high density plasma (HDP) processes

Details Endpoint detection for high density plasma (HDP) processes Endpoint detection for high density plasma (HDP) processes

2005-07-19

2005-07-19

Deo, Duy-Vu (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S711000, C438S714000, C438S719000

Reexamination Certificate

active

06919279

ABSTRACT:
A method and system are provided for endpoint detection of plasma chamber cleaning or plasma etch processes. Optical emission spectroscopy is utilized to determine a spectral emission ratio of two or more light emitting reaction components at wavelengths in close proximity. When a spectral emission ratio or derivative thereof or mathematical function thereof falls below a selected threshold value, the plasma process may be terminated within a calculated time from the threshold value prior to an endpoint value cutoff. Advantageously, the system and methods of the present invention provide real-time, in-situ monitoring of plasma clean or etch processes to optimize the process and avoid under-cleaning or over-cleaning.

REFERENCES:
patent: 4615761 (1986-10-01), Tada et al.
patent: 4839311 (1989-06-01), Riley et al.
patent: 4953982 (1990-09-01), Ebbing et al.
patent: 5045149 (1991-09-01), Nulty
patent: 5288367 (1994-02-01), Angell et al.
patent: 5322590 (1994-06-01), Koshimizu
patent: 5450205 (1995-09-01), Sawin et al.
patent: 5504328 (1996-04-01), Bonser
patent: 5552016 (1996-09-01), Ghanayem
patent: 5653894 (1997-08-01), Ibbotson et al.
patent: 5658423 (1997-08-01), Angell et al.
patent: 5712702 (1998-01-01), McGahay et al.
patent: 5728253 (1998-03-01), Saito et al.
patent: 5737496 (1998-04-01), Frye et al.
patent: 5759424 (1998-06-01), Imatake et al.
patent: 5788869 (1998-08-01), Dalton et al.
patent: 5807761 (1998-09-01), Coronel et al.
patent: 5846373 (1998-12-01), Pirkle et al.
patent: 5864773 (1999-01-01), Barna et al.
patent: 5877032 (1999-03-01), Guinn et al.
patent: 5910011 (1999-06-01), Cruse
patent: 5963336 (1999-10-01), McAndrew et al.
patent: 5966586 (1999-10-01), Hao
patent: 5980767 (1999-11-01), Koshimizu et al.
patent: 5986747 (1999-11-01), Moran
patent: 5989928 (1999-11-01), Nakata et al.
patent: 6017414 (2000-01-01), Koemtzopoulos et al.
patent: 6046796 (2000-04-01), Markle et al.
patent: 6054333 (2000-04-01), Bensaoula
patent: 6068783 (2000-05-01), Szetsen
patent: 6071375 (2000-06-01), Chen et al.
patent: 6074516 (2000-06-01), Howald et al.
patent: 6077386 (2000-06-01), Smith, Jr. et al.
patent: 6077387 (2000-06-01), Tesauro
patent: 6081334 (2000-06-01), Grimbergen et al.
patent: 6090302 (2000-07-01), Smith, Jr. et al.
patent: 6123983 (2000-09-01), Smith, Jr. et al.
patent: 6124927 (2000-09-01), Zhong et al.
patent: 6132577 (2000-10-01), Smith, Jr. et al.
patent: 6134005 (2000-10-01), Smith, Jr. et al.
patent: 6146492 (2000-11-01), Cho et al.
patent: 6153115 (2000-11-01), Le et al.
patent: 6154284 (2000-11-01), McAndrew et al.
patent: 6157447 (2000-12-01), Smith, Jr. et al.
patent: 6159297 (2000-12-01), Herchen et al.
patent: 6164295 (2000-12-01), Ui et al.
patent: 6165312 (2000-12-01), Smith, Jr. et al.
patent: 6169933 (2001-01-01), Smith, Jr. et al.
patent: 6192826 (2001-02-01), Smith, Jr. et al.
patent: 6200412 (2001-03-01), Kilgore et al.
patent: 6221679 (2001-04-01), Smith, Jr. et al.
patent: 6223755 (2001-05-01), Smith, Jr. et al.
patent: 6238937 (2001-05-01), Toprac et al.
patent: 6246473 (2001-06-01), Smith, Jr. et al.
patent: 6254717 (2001-07-01), Smith, Jr. et al.
patent: 6261470 (2001-07-01), Smith, Jr. et al.
patent: 6264852 (2001-07-01), Herchen et al.
patent: 6269278 (2001-07-01), Smith, Jr. et al.
patent: 6275740 (2001-08-01), Smith, Jr. et al.
patent: 6297064 (2001-10-01), Koshimizu
patent: 6303044 (2001-10-01), Koemtzopoulos et al.
patent: 6306246 (2001-10-01), Melvin et al.
patent: 6344151 (2002-02-01), Chen et al.
patent: 6350697 (2002-02-01), Richardson et al.
patent: 6355570 (2002-03-01), Nakata et al.
patent: 6537460 (2003-03-01), Shiobara
patent: 6791692 (2004-09-01), Powell et al.

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