End point detection using gas flow

Details End point detection using gas flow End point detection using gas flow

1981-08-27

1982-08-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156643, 156646, 204192E, 204298, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

043459684

ABSTRACT:
Apparatus and methods for end point detection during the plasma etching of integrated circuit wafers. Etching is conducted in a chamber subjected to the vacuum of a pump drawing at a constant volumetric gas flow rate. The etchant gases entering the chamber are regulated by a controller responsive to a feedback loop sensing pressures within the chamber. Changes in the chamber's chemical composition, which occur in time proximity to the end point of etching, affect the pressure and are detected as variations in the gas flow rates. Empirical results confirm the distinctiveness and repeatability which characterize the flow variations at the end point of etching.

REFERENCES:
patent: 4160690 (1979-07-01), Shibagaki et al.
patent: 4283249 (1981-08-01), Ephrath
Marcoux et al., "Methods of End Point Detection for Plasma Etching," Solid State Technology, pp. 115-122, Apr. 1981.
Hitchman et al., "A Simple Method of End-Point Determination for Plasma Etching," J. Vac. Sci. Technol., vol. 17, No. 6, pp. 1378-1381, Nov./Dec. 1980.
Fok, "Plasma Etching of Aluminium Films Using CCl.sub.4," ECS Extended Abstracts, vol. 80-1, Spring Mtg., St. Louis, pp. 301-303, May 11-16, 1980.
Ukai et al., "End-Point Determination of Aluminum Reactive Ion Etching by Discharge Impedance Monitoring," J. Vac. Sci. Technol., vol. 16, No. 2, pp. 385-387, Mar./Apr. 1979.
Thomas et al., "Use of Chemically-Reactive Gas Plasmas in Preparing Specimens for Scanning Electron Microscopy and Electron Probe Microanalysis," _Scanning Electron Microscopy/1974 (Part 1), Proceedings of the Seventh Annual Scanning Electron Microscope Symposium, IIT Research Institute, Chicago, Apr. 1974, pp. 84-92 and 323-326.
Gorin, "Monitoring of Plasma Chemical Reaction for Ashing and Etching," (Unpublished) Invention Disclosure of the Tegal Corp., Mar. 20, 1974.

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