Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2011-01-18
2011-01-18
Alanko, Anita K (Department: 1713)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S009000, C438S689000, C216S059000, C216S061000, C427S008000, C427S569000
Reexamination Certificate
active
07871830
ABSTRACT:
A method for controlling the plasma etching of semiconductor wafers determines the impedance of a plasma chamber using values representing voltage, current, and the phase angle between them, as provided by a sensor. All or less than all of the data during a first time period may be used to calculate a model. During a second time period, real time data is used to calculate a version of the instant impedance of the chamber. This version of impendence is compared to a time-projected version of the model. The method determines that etching should be stopped when the received data deviates from the extrapolated model by a certain amount. In some embodiments a rolling average is used in the second time period, the rolling average compared to the model to determine the end point condition.
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Gorin Georges J.
Johal Sumer S.
Kieffel Herve C.
Lane Barton
Spruytte Sylvia G. J. P.
Alanko Anita K
Caldwell Michael W.
Pivotal Systems Corporation
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