End point detection method for physical etching process

Details End point detection method for physical etching process End point detection method for physical etching process

1980-05-16

1982-11-09

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 204192E, 324 71E, H01L 21306, C23F 100

Patent

active

043583385

ABSTRACT:
A method for determining the end point for a physical etching process step measures the current at the target being etched and detects changes in the current. Changes in the current measured at the target are indicative of transitions between dissimilar materials or of depth of penetration in a particular material. Momentary changes in the etching flux of the physical etching process are factored out by measuring the current on a mask placed in the vicinity of the target and by subtracting mask current from current measured at the target.

REFERENCES:
Production and Manipulation of Ion Beams [4 and 5], Target Chambers, Ion Beam Current Measurements, Ion Implantation by G. Dearnaley et al., 1973, pp. 416-421.
European Conference on Ion Implantation, Sep. 7-9, 1970, by J. H. Freeman, pp. 1-18.

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