End point detection in time division multiplexed etch processes

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed

Reexamination Certificate

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C438S016000, C438S695000, C438S714000, C216S060000, C216S067000

Reexamination Certificate

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06982175

ABSTRACT:
An improved method for determining endpoint of a time division multiplexed process by monitoring an identified region of a spectral emission of the process at a characteristic process frequency. The region is identified based upon the expected emission spectra of materials used during the time division multiplexed process. The characteristic process frequency is determined based upon the duration of the steps in the time division multiplexed process. Changes in the magnitude of the monitored spectra indicate the endpoint of processes in the time division multiplexed process and transitions between layers of materials.

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patent: 2001-044171 (2001-02-01), None

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