End-point detection in plasma etching or phosphosilicate glass

Details End-point detection in plasma etching or phosphosilicate glass End-point detection in plasma etching or phosphosilicate glass

1981-04-02

1983-11-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 156657, 1566591, 204192E, 356 72, H01L 21306, C03C 1500

Patent

active

044154020

ABSTRACT:
A method for determining the completion of removal by plasma etching of phosphorus doped silicon dioxide from an underlying substrate.

REFERENCES:
patent: 3880684 (1975-04-01), Abe
patent: 4181564 (1980-01-01), Fogarty et al.
patent: 4263088 (1981-04-01), Gorin
patent: 4289188 (1981-09-01), Mizutani et al.
patent: 4303467 (1981-12-01), Scornavacca

Affiliated with

Also associated with

Rating

End-point detection in plasma etching or phosphosilicate glass does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with End-point detection in plasma etching or phosphosilicate glass, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and End-point detection in plasma etching or phosphosilicate glass will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-158254