End-point detection in plasma etching by monitoring radio freque

Details End-point detection in plasma etching by monitoring radio freque End-point detection in plasma etching by monitoring radio freque

1993-08-13

1995-04-18

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156626, 156345, 20429832, 20419233, H05H 100

Patent

active

054075246

ABSTRACT:
The present invention relates to a system and method for detecting the end-point of a layer being removed from a semiconductor wafer by a plasma etching system. The invention determines end-point by referencing first and second positions of matching components of a matching network between a radio frequency source and the plasma etching system chamber. Comparison of a first position representative of chamber load impedance before end-point, and a second position representative of a change in chamber load impedance is utilized to determine end point.

REFERENCES:
patent: 4207137 (1980-01-01), Tretola
patent: 4679007 (1987-07-01), Reese et al.
patent: 4954212 (1990-09-01), Gabriel et al.
patent: 5195045 (1993-03-01), Keane et al.

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