End-of-range damage suppression for ultra-shallow junction forma

Details End-of-range damage suppression for ultra-shallow junction forma End-of-range damage suppression for ultra-shallow junction forma

1998-04-13

2000-06-13

Niebling, John F.

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438301, 438303, 438305, 438307, H01L 21425, H01L 21336

Patent

active

060749377

ABSTRACT:
Lightly doped regions are implanted into an amorphous region in the semiconductor substrate to significantly reduce transient enhanced diffusion upon subsequent activation annealing. A sub-surface non-amorphous region is also formed before activation annealing to substantially eliminate end-of-range defects on crystallization of amorphous region containing the lightly doped implants.

REFERENCES:
patent: 5254484 (1993-10-01), Hefner et al.
patent: 5585286 (1996-12-01), Aronowitz et al.
patent: 5953615 (1999-09-01), Yu

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