Encroachless LOCOS isolation

Details Encroachless LOCOS isolation Encroachless LOCOS isolation

1997-11-06

1999-11-09

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438225, 438297, 257647, H01L 2176

Patent

active

059813580

ABSTRACT:
The present invention provides a fabrication process for fabricating an integrated circuit substrate structure having LOCOS isolation areas formed such that oxidation encroachment at an active surface region patterned on the substrate is less than 0.1 .mu.m. The fabrication process includes various process steps for forming a 0.75 .mu.m. to 1.0 .mu.m layer of silicon dioxide (SiO.sub.2) over thin layers of silicon dioxide (0.01 .mu.m. to 0.05 .mu.m) and silicon nitride (0.05 .mu.m. to 0.10 .mu.m) over a surface region of the substrate to form a protective stack/passivation layers over a surface region of the silicon substrate. The protected substrate surface region is useable for fabricating a microelectronic circuit device, such as a MOS transistor, or a flash memory device. Adjacent the protective stack, a silicon nitride spacer region is formed to effectively widen the protected substrate surface region. The silicon nitride spacer region limits the encroachment of oxide, commonly called bird's beak growth of oxide, into the active surface region beneath the spacer and protective stack. The resulting structure, after removal of the silicon nitride and other passivation layers, is one having an oxide encroachment region that is less than 0.1 .mu.m.

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