Encapsulation of conductive lines of semiconductor devices

Details Encapsulation of conductive lines of semiconductor devices Encapsulation of conductive lines of semiconductor devices

2006-08-08

2006-08-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S381000

Reexamination Certificate

active

07087438

ABSTRACT:
The invention relates to a method of encapsulating conductive lines of semiconductor devices and a structure thereof. An encapsulating protective material, such as TaN, Ta, Ti, TiN, or combinations thereof is disposed over conductive lines of a semiconductor device. The encapsulating protective material protects the conductive lines from harsh etch chemistries when a subsequently deposited material layer is patterned and etched. The encapsulating protective material is conductive and may be left remaining in the completed semiconductor device. The encapsulating material is patterned using a masking material, and processing of the semiconductor device is then continued. The masking material may be left remaining in the structure as part of a subsequently deposited insulating material layer.

REFERENCES:
patent: 6294456 (2001-09-01), Lee et al.
patent: 6440753 (2002-08-01), Ning et al.
patent: 6576545 (2003-06-01), Hopper et al.
patent: 6713802 (2004-03-01), Lee
patent: 6783999 (2004-08-01), Lee

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