Encapsulation component for integrated micro...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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C257S787000, C257SE23128

Reexamination Certificate

active

07745891

ABSTRACT:
The microsystems are integrated in a first cavity bounded by at least a substrate and by a top wall formed by at least a part of a first cover. The component has a second cavity bounded by at least the whole of the top wall of the first cavity and by a second cover formed by a thin layer. The second cover can be covered by a coating made of plastic material molded from a casting. The fabrication process of the component comprises deposition, on the whole of the top wall of the first cavity, of a layer of polymer material and annealing of the layer of polymer material. The layer of polymer material acts as sacrificial layer for deposition of the thin layer designed to form the second cover.

REFERENCES:
patent: 7145213 (2006-12-01), Ebel et al.
patent: WO 01/58804 (2001-08-01), None
patent: WO 03/070625 (2003-08-01), None
Aigner et al., “Cavity-Micromachining' Technology: Zero-Package Solution for Inertial Sensors,” Transducers, Eurosensors XV, 11thInternational Conference on Solid-State Sensors and Actuators, Jun. 2001, pp. 186-189.
Stark et al., “A Low-Temperature Thin-Film Electroplated Metal Vacuum Package,” Journal of Microelectromechanical Systems, vol. 13, No. 2, Apr. 2004, pp. 147-157.
Chen et al., Micro-Electro-Mechanical Systems (MEMS), ASME International Mechanical Engineering Congress and Exposition, vol. 3, Nov. 2001, pp. 769-774.
Bae et al., “Fabrication of cylinder type micro channel using photoresist reflow and isotropic etching,” Microprocesses and Nanotechnology Conference, Digest of Papers, Oct. 2003, pp. 200-201.

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