Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-08-15
2006-08-15
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S680000, C438S197000
Reexamination Certificate
active
07091119
ABSTRACT:
Transistor gate structures, encapsulation structures, and fabrication techniques are provided, in which sidewalls of patterned gate structures are conditioned by nitriding the sidewalls of the gate structure, and a silicon nitride encapsulation layer is formed to protect the conditioned sidewalls during manufacturing processing. The conditioning and encapsulation avoid oxidation of gate stack layers, particularly metal gate layers, and also facilitate repairing or restoring stoichiometry of metal and other gate layers that may be damaged or altered during gate patterning.
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Brady III W. James
Keagy Rose Alyssa
Lindsay Jr. Walter L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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