Encapsulated dielectric and method of fabrication

Details Encapsulated dielectric and method of fabrication Encapsulated dielectric and method of fabrication

1996-06-28

1998-11-03

Picardat, Kevin

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438688, H01L 2144

Patent

active

058308040

ABSTRACT:
A method of encapsulating a dielectric. According to the method of the present invention, a disposable post is formed over a portion of a substrate. Next, a first dielectric layer is formed over the substrate and the disposable post. A second dielectric layer is then formed over the first dielectric layer. Next, a third dielectric layer is formed over the second dielectric layer. A portion of the third dielectric layer is then removed so as to reveal the disposable post. The disposable post is then removed to form an opening.

REFERENCES:
patent: 4866008 (1989-09-01), Brighton et al.
patent: 4996133 (1991-02-01), Brighton et al.
patent: 5219787 (1993-06-01), Carey et al.
patent: 5380679 (1995-01-01), Kano
patent: 5409861 (1995-04-01), Choi
patent: 5518963 (1996-05-01), Park
patent: 5556814 (1996-09-01), Inoue et al.

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