Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-09-05
2006-09-05
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S678000, C257S723000, C257S710000, C257S620000, C257SE23128, C257SE23193, C438S033000, C438S068000, C438S107000, C438S113000, C438S460000, C438S462000
Reexamination Certificate
active
07102224
ABSTRACT:
A component includes a chip having a first chip face and a second chip face, where the first chip face includes component structures and connector metallizations associated with the component structures. The component also includes a frame structure on the first chip face and adjacent to the component structures, and a cover over the frame structure. The cover has a first cover face and a second cover face. The first cover face is closer to the chip than the second cover face. A back metallization is on the second chip face, on sides of the frame structure, and on sides of the cover. A contact is on the second cover face. There is a connection through the cover, which electrically connects the component structures and the contact. The connection is metallized and sealed.
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Clark Jasmine
EPCOS AG
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