Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With window means
Reexamination Certificate
2005-10-18
2005-10-18
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With window means
C257S690000, C257S778000, C257S784000, C257S787000
Reexamination Certificate
active
06956283
ABSTRACT:
The present invention relates to methods to protect a MEMS or microsensor device through one or more release or activation steps in a “package first, release later” manufacturing scheme: This method of fabrication permits wirebonds, other interconnects, packaging materials, lines, bond pads, and other structures on the die to be protected from physical, chemical, or electrical damage during the release etch(es) or other packaging steps. Metallic structures (e.g., gold, aluminum, copper) on the device are also protected from galvanic attack because they are protected from contact with HF or HCL-bearing solutions.
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Cole, Robertson, Swenson, & Osborn, “MEMS Packaging Technique Using HF Vapor Release”, ICAPS Meeting Mar., 2002.
Hu Shouxiang
Myers Jeffrey D.
Watson Robert D.
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