Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2005-01-11
2005-01-11
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S788000, C257S787000, C257S433000, C257S789000
Reexamination Certificate
active
06841888
ABSTRACT:
An encapsulant for use with opto-electronic devices and optical components incorporates a filler made from a glass that has been processed into particle form and heated to a predetermined temperature for a predetermined time, along with an epoxy having an index of refraction matched to that of the glass and heated to a predetermined temperature for a predetermined time, to prevent settling of the filler particles after mixing the filler particles with the epoxy, and thereby obtaining uniform dispersion of the particles within the epoxy. The encapsulant provides for high light transmittance, and its coefficient of thermal expansion can be varied by varying the amount of filler without substantially altering the optical properties of the encapsulant. The coefficient of thermal expansion variation within the encapsulant preferably is less than 30%, due to uniform dispersion of the filler particles within the epoxy.
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Meixner D. Laurence
Meyers Douglas Evan
Morris Mark Allen
Raychaudhuri Satyabrata
Yan Yongan
Flynn Nathan J.
Mandala Jr. Victor A.
Sheppard Mullin Richter & Hampton LLP
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