Emitter switching configuration and corresponding integrated...

Details Emitter switching configuration and corresponding integrated... Emitter switching configuration and corresponding integrated...

2006-08-22

2006-08-22

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S516000, C257S528000

Reexamination Certificate

active

07095084

ABSTRACT:
An emitter switching configuration having at least one bipolar transistor and a MOS transistor having a common conduction terminal and a Zener diode inserted between a control terminal of the bipolar transistor and the common conduction terminal. A monolithic structure is also provided that is effective in implementing the emitter switching configuration.

REFERENCES:
patent: 4777386 (1988-10-01), Majumdar
patent: 5631588 (1997-05-01), Bertolini
patent: 5883537 (1999-03-01), Luoni et al.
patent: 6127723 (2000-10-01), Aiello et al.
patent: 6441445 (2002-08-01), Leonardi et al.
patent: 6441446 (2002-08-01), Patti
patent: 0 219 925 (1987-04-01), None
patent: 0 959 562 (1999-11-01), None
Baribaud, Michel et al., “Générateur d'impulsions linéaireś de courant de forte intensité,”L'Onde Electrique, 64(5):21-28, Sep.-Oct. 1984.

Affiliated with

Also associated with

Rating

Emitter switching configuration and corresponding integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Emitter switching configuration and corresponding integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Emitter switching configuration and corresponding integrated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3617181