Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With extended latchup current level
Patent
1992-12-14
1994-04-26
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With extended latchup current level
257152, 257163, 257136, 257138, 257144, H01L 2974, H01L 31111
Patent
active
053069307
ABSTRACT:
An emitter switched thyristor with buried dielectric layer includes a contiguous P-N-P-N series of semiconductor regions between an anode contact and cathode contact. These regions correspond to an anode region of second conductivity type, a first base region of first conductivity type, a second base region of second conductivity type on the first base region, and a floating emitter region contacting the second base region and forming a P-N junction therewith. In addition, a field effect transistor is also provided between the cathode contact and the floating emitter for controlling turn-on and turn-off. An insulating region is also provided between the cathode region and the second base region and prevents the formation of a parasitic thyristor between the cathode contact and the anode contact. The insulating region preferably includes a buried dielectric layer selected from the group consisting of SiO.sub.2, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and MgAl.sub.2 O.sub.4. The insulating region is preferably formed using SIMOX processing techniques.
REFERENCES:
patent: 4062032 (1977-12-01), Neilson
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4914496 (1990-04-01), Nakagawa et al.
patent: 4928155 (1990-05-01), Nakagawa et al.
patent: 4954869 (1990-09-01), Bauer
patent: 4956690 (1990-09-01), Kato
patent: 4959703 (1990-09-01), Ogura et al.
patent: 4963972 (1990-10-01), Shinobe et al.
patent: 5014102 (1991-05-01), Adler
patent: 5086323 (1992-02-01), Nakagawa et al.
patent: 5089864 (1992-02-01), Sakurai
patent: 5091766 (1992-02-01), Terashima
patent: 5093701 (1992-03-01), Nakagawa et al.
patent: 5099300 (1992-03-01), Baliga
patent: 5105244 (1992-04-01), Bauer
patent: 5144401 (1992-09-01), Ogura et al.
Shekar et al; "Experimental Demonstration of the emitter Switched Thyristor"; pp. 128-131.
Baliga; "Enhancement- and Depletion Mode Vertical channel MOS gated Thyristors"; Sep. 27, 1979; pp. 645-647.
Baliga, Adler, Gray and Love, "The Insulated Gate Rectifier (IGR): A New Power Switching Device," IEEE, IEDM-82, pp. 264-267, 1982.
Temple, "MOS Controlled Thyristors (MCT'S), IEDM-84", pp. 282-285, 1984.
Baliga, Adler, Love, Gray and Zommer, "The Insulated Gate Translator: A New Three-Terminal MOS-Controlled Bipolar Power Device, IEEE Transactions on Electron Devices", vol. ED-31, No. 6, pp. 821-828, Jun., 1984.
Baliga and Chang, "The MOS Depletion-Mode Thyristor: A New MOS-Controlled Bipolar Power Device", IEEE Electron Device Letters, vol. 8, No. 8, pp. 411-413, Aug., 1988.
Baliga, "The MOS-Gated Emitter Switched Thyristor", IEEE Electron Device Letters (reprint), vol. 11, No. 2, pp. 75-77, Feb., 1990.
Nandakumar, Baliga, Shekar, Tandon and Reisman, "A New MOS-Gated Power Thyristor Structure with Turn-Off Achieved by Controlling the Base Resistance," IEEE Electron Letters, vol. 12, No. 5, pp. 227-229, May, 1991.
Shekar, Baliga, Nandakumar, Tandon and Reisman, "Characteristics of the Emitter-Switched Thyristor", IEEE Transactions on Electron Devices, vol. 38, No. 7, pp. 1619-1623, Jul., 1991.
Nandakumar, Baliga, Shekar, Tandon and Reisman, "The Base Resistance Controlled Thyristor (BRT) `A New MOS Gated Power Thyristor`", IEEE, pp. 138-141, 1991.
Shekar, Baliga, Nandakumar, Tandon and Reisman, "Experimental Demonstration of the Emitter Switched Thyristor", pp. 128-131.
Fahmy Wael
Hille Rolf
North Carolina State University at Raleigh
LandOfFree
Emitter switched thyristor with buried dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Emitter switched thyristor with buried dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Emitter switched thyristor with buried dielectric layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1713617