Emitter switched thyristor

Details Emitter switched thyristor Emitter switched thyristor

1996-06-20

1998-12-01

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257152, 257153, H01L 2974

Patent

active

058442588

ABSTRACT:
An emitter switched thyristor has an enlarged safe operating range. A semiconductor substrate of a first conductivity type (a p-type) is provided and a semiconductor region of a second conductivity type (an n-type) is formed on the substrate. A well region of the first conductivity type is formed within the semiconductor region, and a plurality of well subregions of the second conductivity type are formed within the well region. The well subregions are all separated from each other by a separating portion of the well region. A plurality of electrode contacts are provided, including a gate electrode in contact with the well region and at least first and second cathode electrodes. The second cathode electrode is in contact with the separating portion of the well region.

REFERENCES:
patent: 5296725 (1994-03-01), Nandakomar et al.
patent: 5355003 (1994-10-01), Tomomatsu

Affiliated with

Also associated with

Rating

Emitter switched thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Emitter switched thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Emitter switched thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2397588