Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-10-11
2005-10-11
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S422000
Reexamination Certificate
active
06953946
ABSTRACT:
An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.
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Yokoo et al, “Energy distribution of tunneling emission from Si-gate metal-oxide-semiconductor cathode”,J. Vac. Sci. Technol. B,vol. 12, No. 2, pp. 801-805 (1994).
Jeong Soo-hwan
Kim Dong-wook
Moon Chang-wook
Yoo In-kyeong
Burns Doane Swecker & Mathis L.L.P.
Ngo Ngan V.
Samsung Electronics Co,. Ltd.
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