Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1984-12-18
1987-01-06
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Semiconductive
365154, 357 92, 307317A, G11C 1140
Patent
active
046352309
ABSTRACT:
An improved ECL bipolar memory cell is disclosed which comprises connecting the respective collectors of the memory transistors in the flip-flop circuit to bit lines using Schottky diodes to protect against latch-up of the ECL cell; and the inversion of the transistors in the circuits to provide a buried emitter construction for alpha strike protection. In a preferred embodiment, the Schottky diode and the load devices, such as resistors or load transistors used to couple the cell to one of the word lines are made using polysilicon to facilitate construction of the cell, reduce the total number of contacts needed, and enhance the speed of the cell.
REFERENCES:
patent: 3909807 (1975-09-01), Fulton
patent: 4460984 (1984-07-01), Knepper
patent: 4480319 (1984-10-01), Hotta et al.
patent: 4513309 (1985-04-01), Cricchi
patent: 4543595 (1985-09-01), Vora
Dorler et al., "A 1024-Byte ECL Randon Access Memory Using a Complementary Transistor Switch Cell," IBM J. Res. Dev., vol. 25, No. 3, May 1981, pp. 126-134.
Agraz-Guerena et al., "OXIL, A Versatile Bipolar VLSI Technology," IEEE Journal of Solid-State Circuits, vol. SC-15, No. 4, Aug. 1980, pp. 462-466.
Ko Wen C.
Thomas Mammen
Advanced Micro Devices , Inc.
Fears Terrell W.
King Patrick T.
Taylor John P.
Valet Eugene H.
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