Emitter and method of making

Details Emitter and method of making Emitter and method of making

2006-10-10

2006-10-10

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S135000, C438S139000, C438S337000, C438S345000

Reexamination Certificate

active

07118982

ABSTRACT:
An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

REFERENCES:
patent: 4923421 (1990-05-01), Brodie et al.
patent: 5142184 (1992-08-01), Kane
patent: 5374844 (1994-12-01), Moyer
patent: 5507676 (1996-04-01), Taylor et al.
patent: 5528103 (1996-06-01), Spindt et al.
patent: 5557596 (1996-09-01), Gibson et al.
patent: 5559342 (1996-09-01), Tsukamoto et al.
patent: 5760417 (1998-06-01), Watanabe et al.
patent: 5861707 (1999-01-01), Kumar
patent: 6011356 (2000-01-01), Janning et al.
patent: 6023124 (2000-02-01), Chuman et al.
patent: 6033924 (2000-03-01), Pack et al.
patent: 6313043 (2001-11-01), Hattori
patent: 6577057 (2003-06-01), Yamamoto et al.
patent: 2001/0004979 (2001-06-01), Han et al.
patent: WO 01/80273 (2001-10-01), None

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