Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2006-10-10
2006-10-10
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C438S135000, C438S139000, C438S337000, C438S345000
Reexamination Certificate
active
07118982
ABSTRACT:
An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.
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Govyadinov Alexander
Regan Michael J.
Hewlett--Packard Development Company, L.P.
Louie Wai-Sing
Myers Timothy F.
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