Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2005-03-10
2008-11-25
Hendricks, Keith D. (Department: 1794)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C438S009000, C156S345240, C216S060000
Reexamination Certificate
active
07455790
ABSTRACT:
A plasma processing method using a spectroscopic processing unit which includes separating spectrally plasma radiation emitted from a vacuum process chamber into component spectra, converting the component spectra into a time series of analogue electric signals composed of different wavelength components at a predetermined period, adding together analogue signals of the different wavelength components, converting a plurality of added signals into digital quantities on a predetermined-period basis, digitally adding together the plurality of added and converted signals a plural number of times on a plural-signal basis, determining discriminatively an end point of a predetermined plasma process on the basis of a signal resulting from the digital addition step, and terminating the predetermined plasma process.
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Fujii Takashi
Kaji Tetsunori
Kimura Shizuaki
Usui Tatehito
Antonelli, Terry Stout & Kraus, LLP.
George Patricia A
Hendricks Keith D.
Hitachi , Ltd.
Hitachi High-Technologies Corporation
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