Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1999-04-22
2000-08-08
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438700, 438758, H01L 2100
Patent
active
061001996
ABSTRACT:
A semiconductor chip structure includes a substrate, at least one thermal conductor embedded within the semiconductor chip structure, the thermal conductor providing electrical insulation and a plurality of devices formed within the structure adjacent to the at least one thermal conductor such that during operation heat produced in the devices is transferred into and through the at least one thermal conductor to reduce an operating temperature of the devices. This structure is particularly useful in silicon-on insulator devices. A method of forming embedded thermal conductors in a semiconductor chip includes the steps of providing a substrate having an oxide layer formed thereon, etching trenches into the oxide layer, depositing diamond to fill the trenches to form thermal conductors contacting the substrate and forming devices and contacts adjacent to the thermal conductors for providing heat flow paths to reduce an operating temperature of the devices.
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Edholm et al., "Silicon-on-Diamond MOS-Transistors with Thermally Grown Gate Oxide", IEEE, International Conference, Oct. 1997, pp. 30-31.
Joshi Rajiv Vasant
Reohr William Robert
Chen Kin-Chan
International Business Machines - Corporation
Utech Benjamin L.
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