Embedded strain layer in thin SOI transistors and a method...

Details Embedded strain layer in thin SOI transistors and a method... Embedded strain layer in thin SOI transistors and a method...

2008-07-15

2008-07-15

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S150000, C438S300000, C257SE21626, C257SE21428

Reexamination Certificate

active

11466572

ABSTRACT:
By forming a deep recess through the buried insulating layer and re-growing a strained semiconductor material, an enhanced strain generation mechanism may be provided in SOI-like transistors. Consequently, the strain may also be efficiently created by the embedded strained semiconductor material across the entire active layer, thereby significantly enhancing the performance of transistor devices, in which two channel regions may be defined.

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International Search Report Dated Feb. 9, 2007.
Malgorzata Jurczak, et al. “Silicon-on-Nothing (SON)—and Innovative Process for Advanced CMOS” IEEE Transactions on Electron Devices, vol. 47, No. 11, Nov. 2000.

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