Embedded photodetector apparatus in a 3D CMOS chip stack

Details Embedded photodetector apparatus in a 3D CMOS chip stack Embedded photodetector apparatus in a 3D CMOS chip stack

2009-11-16

2011-11-22

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S293000, C257S462000, C257SE25032, C257SE27133, C257SE33076

Reexamination Certificate

active

08063424

ABSTRACT:
An embedded photodetector apparatus for a three-dimensional complementary metal oxide semiconductor (CMOS) stacked chip assembly having a CMOS chip and one or more thinned CMOS layers is provided. At least one of the one or more thinned CMOS layers includes an active photodiode area defined within the one or more thinned CMOS layers, the active photodiode area being receptive of an optical signal incident thereon, and the active photodiode area comprising a bulk substrate portion of the thinned CMOS layer. The bulk substrate portion has a diode photodetector formed therein.

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