Embedded memory cell and method of manufacturing same

Details Embedded memory cell and method of manufacturing same Embedded memory cell and method of manufacturing same

2011-08-16

2011-08-16

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27093, C257S303000, C438S243000

Reexamination Certificate

active

07999298

ABSTRACT:
An embedded memory cell includes a semiconducting substrate (110), a transistor (120) having a source/drain region (121) at least partially embedded in the semiconducting substrate, and a capacitor (130) at least partially embedded in the semiconducting substrate. The capacitor includes a first electrode (131) and a second electrode (132) that are electrically isolated from each other by a first electrically insulating material (133). The first electrode is electrically connected to the semiconducting substrate and the second electrode is electrically connected to the source/drain region of the transistor.

REFERENCES:
patent: 4301592 (1981-11-01), Lin
patent: 4803535 (1989-02-01), Taguchi
patent: 5804848 (1998-09-01), Mukai
patent: 5844278 (1998-12-01), Mizuno et al.
patent: 5899710 (1999-05-01), Mukai
patent: 6018176 (2000-01-01), Lim
patent: 6066869 (2000-05-01), Noble et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6459123 (2002-10-01), Enders et al.
patent: 6472258 (2002-10-01), Adkisson et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 6562665 (2003-05-01), Yu
patent: 6583469 (2003-06-01), Fried et al.
patent: 6611029 (2003-08-01), Ahmed et al.
patent: 6630388 (2003-10-01), Sekigawa et al.
patent: 6635909 (2003-10-01), Clark et al.
patent: 6642090 (2003-11-01), Fried et al.
patent: 6657259 (2003-12-01), Fried et al.
patent: 6689650 (2004-02-01), Gambino et al.
patent: 6770516 (2004-08-01), Wu et al.
patent: 6787402 (2004-09-01), Yu
patent: 6794718 (2004-09-01), Nowak et al.
patent: 6798000 (2004-09-01), Luyken et al.
patent: 6800910 (2004-10-01), Lin et al.
patent: 6803631 (2004-10-01), Dakshina-Murthy et al.
patent: 6812075 (2004-11-01), Fried et al.
patent: 6815277 (2004-11-01), Fried et al.
patent: 6821834 (2004-11-01), Ando
patent: 6833588 (2004-12-01), Yu et al.
patent: 6835614 (2004-12-01), Hanafi et al.
patent: 6849884 (2005-02-01), Clark et al.
patent: 6869868 (2005-03-01), Chiu et al.
patent: 6885055 (2005-04-01), Lee
patent: 6897527 (2005-05-01), Dakshina-Murthy et al.
patent: 2006/0205143 (2006-09-01), Govindarajan
patent: 2008/0237678 (2008-10-01), Datta et al.
patent: 10-2002-09418 (2002-02-01), None
patent: 10-2004-79523 (2004-09-01), None
patent: 10-2008-43143 (2008-06-01), None
patent: 10-2008-48244 (2008-06-01), None
patent: 2010/078051 (2010-07-01), None
Choi, Yang-Kyu et al., “Sub-20nm CMOS FinFET Technologies”, Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, IEEE 2001, 4 pgs.
Park, Jong-Tae et al., “Pi-Gate SOI MOSFET”, IEEE Electron Device Letters, vol. 22, No. 8, Aug. 2001, pp. 405-406.
International Search Report and Written Opinion for PCT Patent Publicaiton No. PCT/US2009/068524, mailed on Jul. 9, 2010, 8 pages.

Affiliated with

Also associated with

Rating

Embedded memory cell and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Embedded memory cell and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Embedded memory cell and method of manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662772