Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-21
2009-06-02
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S332000, C257S374000, C257S401000, C257S510000, C257S520000, C257S622000, C257S627000, C438S198000, C438S406000, C438S424000
Reexamination Certificate
active
07541629
ABSTRACT:
A method and structure for reducing leakage currents in integrated circuits based on a direct silicon bonding (DSB) fabrication process. After recessing a top semiconductor layer and an underlying semiconductor substrate, a dielectric layer may be deposited and etched back to form embedded spacers. Conventional source/drain regions may then be formed.
REFERENCES:
patent: 6686624 (2004-02-01), Hsu
patent: 2001/0042874 (2001-11-01), Lee et al.
patent: 2003/0168680 (2003-09-01), Hsu
patent: 2006/0160292 (2006-07-01), Anderson et al.
patent: 2006/0163672 (2006-07-01), Wang et al.
patent: 2006/0276011 (2006-12-01), Fogel et al.
patent: 2007/0018247 (2007-01-01), Brindle et al.
patent: 2007/0241323 (2007-10-01), Saenger et al.
patent: 2008/0079003 (2008-04-01), Shaheen et al.
patent: 2008/0199997 (2008-08-01), Grebs et al.
patent: 2008/0242029 (2008-10-01), Wu et al.
patent: 2008/0258222 (2008-10-01), Cannon et al.
Joshi, Sachin, “Junction Passivation for Direct Silicon Bond Hybrid Orientation Technology,” IEEE Transactions on Electron Devices, Aug. 2007, pp. 2045-2050, vol. 54, No. 8.
Sung, Chun-Yung et al., “High Performance CMOS Bulk Technology Using Direct Silicon Bond (DSB) Mixed Crystal Orientation Substrates,” IEEE International Electron Device Meeting (IEDM), Dec. 2005, pp. 225-228, Vol. 5, No. 7.
Yang, M. et al., “High Performance CMOS Fabricated on Hybrid Substrate with Different Crystal Orientations,” IEEE International Electron Device Meeting, Dec. 2003, pp. 18.7.1-18.7.4, vol. 8, No. 10.
Luo Zhijiong
Yin Haizhou
Zhu Huilong
International Business Machines - Corporation
King & Spalding LLP
Wojciechowicz Edward
LandOfFree
Embedded insulating band for controlling short-channel... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Embedded insulating band for controlling short-channel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Embedded insulating band for controlling short-channel... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4125459