Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-09
2009-02-24
Nguyen, Tuan H (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000
Reexamination Certificate
active
07495279
ABSTRACT:
Flash memory device structures and methods of manufacture thereof are disclosed. The flash memory devices are manufactured on silicon-on-insulator (SOI) substrates. Shallow trench isolation (STI) regions and the buried oxide layer of the SOI substrate are used to isolate adjacent devices from one another. The methods of manufacture require fewer lithography masks and may be implemented in stand-alone flash memory devices, embedded flash memory devices, and system on a chip (SoC) flash memory devices.
REFERENCES:
patent: 5471422 (1995-11-01), Chang et al.
patent: 6307781 (2001-10-01), Shum
patent: 6314021 (2001-11-01), Maeda et al.
patent: 6438030 (2002-08-01), Hu et al.
patent: 6608345 (2003-08-01), Kunikiyo et al.
patent: 6628544 (2003-09-01), Shum et al.
patent: 6841824 (2005-01-01), Shum
patent: 6864151 (2005-03-01), Yan et al.
patent: 6909139 (2005-06-01), Shum et al.
patent: 2005/0179079 (2005-08-01), Wu
patent: 2001-0110976 (2001-12-01), None
Burnett, D., et al., “An Advanced Flash Memory Technology on SOI,” IEDM 98, 1998, pp. 983-986, IEEE.
Chan, A. C.-K., et al., “Effects of Floating Body on Double Polysilicon Partially Depleted SOI Nonvolatile Memory Cell,” IEEE Electron Device Letters, 2003, pp. 1-3, IEEE.
Chan, A.C.K., et al., “SOI Flash Memory Scaling Limit and Design Consideration Based on 2-D Analytical Modeling,” IEEE Transactions on Electron Devices, Dec. 2004, pp. 2054-2060, vol. 51, No. 12, IEEE.
Chi, M.-h., et al., “Programming and Erase with Floating-Body for High Density Low Voltage Flash EEPROM Fabricated on SOI Wafers,” Proceedings 1995 IEEE International SOI Conference, Oct. 1995, pp. 129-130, 95CH35763, IEEE.
Lonĉar, B., et al., “One of Application of SOI Memory Cell—Memory Array,” Proc. 22nd International Conference on Microelectronics (MIEL2000), May 14-17, 2000, pp. 455-458, vol. 2, IEEE, Niŝ, Serbia.
Shum Danny Pak-Chum
Tilke Armin
Yan Jiang
Infineon - Technologies AG
Nguyen Tuan H
Slater & Matsil L.L.P.
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