Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21682, C257SE27103, C438S265000, C438S279000, C438S283000, C438S303000
Reexamination Certificate
active
06878986
ABSTRACT:
A memory cell including a substrate having a source region; a floating gate structure disposed over the substrate and associated with the source region; and a source coupling enhancement structure covering an exposed portion of the floating gate structure and extending to the source region. The flash memory cell can be fabricated in a method including the steps of forming the floating gate structure over a substrate; forming the source coupling enhancement structure on an exposed portion of the floating gate structure; and forming the source region in the substrate.
REFERENCES:
patent: 5631482 (1997-05-01), Hong
patent: 5702965 (1997-12-01), Kim
patent: 5734607 (1998-03-01), Sung et al.
patent: 5736444 (1998-04-01), Kauffman et al.
patent: 6054350 (2000-04-01), Hsieh et al.
patent: 6074914 (2000-06-01), Ogura
patent: 6091101 (2000-07-01), Wang
patent: 6207507 (2001-03-01), Wang
patent: 6303454 (2001-10-01), Yeh et al.
patent: 6326661 (2001-12-01), Dormans et al.
patent: 6331464 (2001-12-01), Liou et al.
patent: 6355524 (2002-03-01), Tuan et al.
patent: 6355527 (2002-03-01), Lin et al.
patent: 6380583 (2002-04-01), Hsieh et al.
patent: 6384450 (2002-05-01), Hidaka et al.
patent: 6414350 (2002-07-01), Hsieh et al.
patent: 6432773 (2002-08-01), Gerber et al.
patent: 6479346 (2002-11-01), Yi et al.
patent: 6479859 (2002-11-01), Hsieh et al.
patent: 6482699 (2002-11-01), Hu et al.
patent: 20020009852 (2002-01-01), Kobayashi et al.
patent: 20020031886 (2002-03-01), Lim
patent: 20020036316 (2002-03-01), Fujio et al.
patent: 20020109181 (2002-08-01), Hsieh et al.
patent: 20020110984 (2002-08-01), Liou et al.
patent: 20020142535 (2002-10-01), Ho et al.
patent: 20020142545 (2002-10-01), Lin
patent: 20020149050 (2002-10-01), Fazio et al.
patent: 20030011017 (2003-01-01), Lee et al.
patent: 20030013255 (2003-01-01), Lojek et al.
Huang Chen-Ming
Shyu Der-Shin
Sung Hung-Cheng
Duane Morris LLP
Nelms David
Taiwan Semiconductor Manufacturing Co. Ltd.
Tran Mai-Huong
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