Embedded DRAM with noise-protecting substrate isolation well

Details Embedded DRAM with noise-protecting substrate isolation well Embedded DRAM with noise-protecting substrate isolation well

1998-03-30

1999-12-07

Phan, Trong

Static information storage and retrieval

Systems using particular element

Capacitors

365226, G11C 1124, G11C 700

Patent

active

059994401

ABSTRACT:
The plurality of memory cells of a dynamic random access memory (DRAM) are formed in a well of one majority carrier type, and the well is located in a substrate of the other majority carrier type. The well electrically isolates the memory cells from electrical noise signals created by current in the substrate and charged carriers created by alpha particles. The well is connected at multiple spaced-apart locations to a referencing conductor, to maintain the well at a uniform potential in response to noise. The memory cells are formed in a single well, or groups of the memory cells are each formed in a separate well. A shielding conductor, such as the mesh or an integrally continuous layer of metal which is spaced from the memory cells, overlays a matrix of the memory cells and shields then from the effects of noise.

REFERENCES:
patent: 4866676 (1989-09-01), Crisp et al.
patent: 5106773 (1992-04-01), Chen et al.
patent: 5208778 (1993-05-01), Kumanoya et al.
patent: 5231319 (1993-07-01), Crafts et al.
patent: 5270977 (1993-12-01), Iwamoto et al.
patent: 5323348 (1994-06-01), Mori et al.
patent: 5325334 (1994-06-01), Roh et al.
patent: 5373472 (1994-12-01), Ohsawa
patent: 5375095 (1994-12-01), Yamada et al.
patent: 5386386 (1995-01-01), Ogihara
patent: 5388104 (1995-02-01), Shirotori
patent: 5440517 (1995-08-01), Morgan et al.
patent: 5471482 (1995-11-01), Byers et al.
patent: 5502675 (1996-03-01), Kohno et al.
patent: 5517450 (1996-05-01), Ohsawa et al.
patent: 5577004 (1996-11-01), Leshem
patent: 5623640 (1997-04-01), Nakabo
patent: 5650975 (1997-07-01), Hamade et al.
patent: 5668755 (1997-09-01), Hidaka
patent: 5689466 (1997-11-01), Quereshi
patent: 5694355 (1997-12-01), Skjaveland et al.
patent: 5825682 (1998-10-01), Fukui

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