Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-03
2006-10-03
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000, C257S306000, C257SE27086, C257SE27092
Reexamination Certificate
active
07115935
ABSTRACT:
A method for fabricating a metal-insulator-metal capacitor in an embedded DRAM process is described. A plurality of contact plugs are provided through an insulating layer to semiconductor device structures in a substrate wherein the contact plugs are formed in a logic area of the substrate and in a memory area of the substrate and providing node contact plugs to node contact regions within the substrate in the memory area. Thereafter, capacitors are fabricated in a twisted trench in a self-aligned copper process.
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Chen Chun-Yao
Chu Huey-Chi
Tu Kuo-Chi
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Toniae M.
Thomas Kayden Horstemeyer & Risley
Wilczewski Mary
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