Embedded DRAM for metal-insulator-metal (MIM) capacitor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S304000, C257S306000, C257SE27086, C257SE27092

Reexamination Certificate

active

07115935

ABSTRACT:
A method for fabricating a metal-insulator-metal capacitor in an embedded DRAM process is described. A plurality of contact plugs are provided through an insulating layer to semiconductor device structures in a substrate wherein the contact plugs are formed in a logic area of the substrate and in a memory area of the substrate and providing node contact plugs to node contact regions within the substrate in the memory area. Thereafter, capacitors are fabricated in a twisted trench in a self-aligned copper process.

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