Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-06-07
2005-06-07
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S772000, C257S777000, C257S778000, C361S783000
Reexamination Certificate
active
06903458
ABSTRACT:
A carrier for an integrated chip is embedded into a substrate, so that stresses due to thermal expansion are uniformly distributed over an interface between the substrate and the carrier (hereinafter “embedded carrier”). Such an embedded carrier may be formed of a material having a coefficient of thermal expansion similar or identical to the coefficient of thermal expansion of an integrated circuit chip to be mounted thereon, so as to eliminate stresses (due to thermal expansion) at joints between the carrier and the integrated circuit chip. The just-described joints may be formed by any method well known in the art, e.g. flip-chip bonding. Such packaging of one or more integrated circuit chip(s) eliminates reliability issues associated with conventional flip chip bonded components, which are caused by, for example, concentration of stresses in conventional solder ball interconnections between a chip and a substrate.
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Jr. Carl Whitehead
Smoot Stephen W.
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