Embedded capacitor

Details Embedded capacitor Embedded capacitor

2004-01-12

2009-12-29

Clark, Jasmine J (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S532000, C257S533000, C257S595000, C257SE27016, C257SE27017, C257SE27019, C257SE27025, C257SE27034, C257SE27048, C438S243000, C438S244000, C438S245000, C438S381000, C438S386000, C438S387000, C438S388000

Reexamination Certificate

active

07638828

ABSTRACT:
The invention concerns a capacitor whereof one first electrode consists of a highly doped active region (D) of a semiconductor component (T) formed on one side of a surface of a semiconductor body, and whereof the second electrode consists of a conductive region (BR) coated with insulation (IL) formed beneath said active region and embedded in the semiconductor body.

REFERENCES:
patent: 4649625 (1987-03-01), Lu
patent: 4792834 (1988-12-01), Uchida
patent: 5302542 (1994-04-01), Kishi et al.
patent: 5805497 (1998-09-01), Uchida
patent: 5843820 (1998-12-01), Lu
patent: 5903036 (1999-05-01), Onozawa
patent: 6204527 (2001-03-01), Sudo et al.
patent: 6759282 (2004-07-01), Campbell et al.
International Search Report from corresponding International Application No. PCT/FR2004/050011, filed Jan. 12, 2004.

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