Embedded barrier for dielectric encapsulation

Details Embedded barrier for dielectric encapsulation Embedded barrier for dielectric encapsulation

2005-09-13

2008-07-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23152

Reexamination Certificate

active

07394154

ABSTRACT:
A semiconductor interconnect structure and method providing an embedded barrier layer to prevent damage to the dielectric material during or after Chemical Mechanical Polishing. The method employs a combination of an embedded film, etchback, using either selective CoWP or a conformal cap such as a SiCNH film, to protect the dielectric material from the CMP process as well as subsequent etch, clean and deposition steps of the next interconnect level.

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