Elimination of residual materials in a multiple-layer interconne

Details Elimination of residual materials in a multiple-layer interconne Elimination of residual materials in a multiple-layer interconne

1997-09-05

2000-11-28

Potter, Roy

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 438622, 438631, H01L 2348

Patent

active

061539333

ABSTRACT:
A multiple-layer interconnect structure in an integrated circuit, is formed using damascene techniques. A first layer interconnect has a first dielectric layer through which at least one first layer conductor extends. A second layer interconnect is then formed on the first layer interconnect. The second layer interconnect also includes a second layer dielectric through which at least one second layer conductor extends. However, the second layer interconnect is created by first forming a thick second later dielectric layer and then reducing the thickness of the second layer dielectric prior to a patterning step. As a result topographical irregularities that may have carried over to the second layer interconnect from the first layer interconnect are removed by providing a substantially planar surface on the second layer dielectric.

REFERENCES:
patent: 5387535 (1995-02-01), Wilmsmeyer
patent: 5391520 (1995-02-01), Chen et al.
patent: 5453400 (1995-09-01), Abernathey et al.
patent: 5489797 (1996-02-01), Chan et al.
patent: 5496774 (1996-03-01), Pramanik et al.
patent: 5497025 (1996-03-01), Wong
patent: 5510652 (1996-04-01), Burke et al.
patent: 5516726 (1996-05-01), Kim et al.
patent: 5521106 (1996-05-01), Okabe
patent: 5563096 (1996-10-01), Nasr
patent: 5589415 (1996-12-01), Blanchard
patent: 5599740 (1997-02-01), Jang et al.
patent: 5602423 (1997-02-01), Jain
patent: 5621232 (1997-04-01), Ohno
patent: 5621235 (1997-04-01), Jeng

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