Elimination of proximity effect in photoresist

Details Elimination of proximity effect in photoresist Elimination of proximity effect in photoresist

1998-03-27

2000-03-21

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Including heating

430322, G03F 726

Patent

active

060401192

ABSTRACT:
The proximity effect in photoresist patterns has been eliminated by carefully controlling the values of three independent variables that are involved in the photolithographic process. These are the temperature at which Post Exposure Bake is performed, the numerical aperture of the exposure system and the partial coherence parameter. Specifically, the Post Exposure Bake temperature should be 20-25.degree. C. lower than that recommended by the manufacturer, the numerical aperture should be around 0.5 and the partial coherence parameter around 0.8. If these guidelines are followed, no proximity effect is in evidence down to duty ratios less than 1 and distortion-free patterns are obtained without the need for an Optical Proximity Correction.

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