Elimination of dehydrogenation step when forming a silicon thin

Details Elimination of dehydrogenation step when forming a silicon thin Elimination of dehydrogenation step when forming a silicon thin

1998-02-11

2000-06-27

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438149, 438151, 438166, 438486, H01L 2136

Patent

active

060806435

ABSTRACT:
Disclosed is a process of forming a silicon thin film used as an active layer of a thin film transistor, which process is improved for enhancing a quality and a productivity of the silicon thin film. At a physical vapor deposition step, an amorphous silicon thin film is physically formed on a substrate in vacuum. Then, at a laser annealing step, directly after formation of the amorphous silicon thin film without the need of dehydrogenation, a laser light is irradiated to the amorphous silicon thin film, to convert the amorphous silicon thin film into a polycrystalline silicon thin film. After that, the polycrystalline silicon thin film thus converted is processed to form a thin film transistor. In the physical vapor deposition step, an amorphous silicon thin film may be formed by sputtering using a target made from a silicon crystal body or a silicon sintered body. In the sputtering, an amorphous silicon thin film can be formed by sputtering using a target previously mixed with an impurity in a desired concentration. By introducing an impurity in the amorphous silicon thin film at the film formation stage, a threshold characteristic of a thin film transistor can be previously controlled.

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S. L. Rohde, Sputter Deposition, ASM Handbook, vol. 5 Surface Engineering, p. 573, 1994.

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