Eliminating undercutting of mask material when etching semicondu

Details Eliminating undercutting of mask material when etching semicondu Eliminating undercutting of mask material when etching semicondu

1988-09-22

1991-02-19

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156651, 156656, 156657, 1566591, 437228, H01L 21308, C25F 312

Patent

active

049941429

ABSTRACT:
It has been determined that etchants which are used in forming the topography of a semiconductor device act to etch very quickly semiconductor oxides as compared to the action on the semiconductor material itself. If the oxides are immediately below the surface of the etchant mask, undercutting of the mask will occur and etched grooves will vary in width and shape. Thus, it is imperative in order to obtain consistent and repeatable etching action, that all native oxides be removed from the surface of the semiconductor to be etched, and that they be prevented from forming between the semiconductor material and the mask. This is accomplished by making sure that after removing the native oxide material from the surface to be masked and etched, the body is placed in an oxygen free environment before its temperature is raised to a temperature at which further native oxides may form. Thus, undercutting or underetching of the mask is prevented.

REFERENCES:
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4436584 (1984-03-01), Bernacki et al.
patent: 4797179 (1989-01-01), Watson et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1--Process Technology, Lattice Press, Sunset Beach, Calif., p. 520.

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