Elevation of transistor channels to reduce impact of shallow...

Details Elevation of transistor channels to reduce impact of shallow... Elevation of transistor channels to reduce impact of shallow...

2006-02-27

2011-10-11

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S510000, C257S511000, C257S513000, C257SE27062, C257SE29020

Reexamination Certificate

active

08035168

ABSTRACT:
Roughly described, transistor channel regions are elevated over the level of certain adjacent STI regions. Preferably the STI regions that are transversely adjacent to the diffusion regions are suppressed, as are STI regions that are longitudinally adjacent to N-channel diffusion regions. Preferably STI regions that are longitudinally adjacent to P-channel diffusions are not suppressed; preferably they have an elevation that is at least as high as that of the diffusion regions.

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