Elevated source and drain elements for strained-channel...

Details Elevated source and drain elements for strained-channel... Elevated source and drain elements for strained-channel...

2002-06-07

2009-11-10

Mai, Anh D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000, C257SE29268

Reexamination Certificate

active

07615829

ABSTRACT:
A semiconductor structure having a surface layer disposed over a substrate, the surface layer including strained silicon. A contact layer is disposed over a portion of the surface layer, the contact layer including a metal-semiconductor alloy. A bottommost boundary of the contact layer is disposed above a bottommost boundary of the surface layer.

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