Elevated local interconnect and contact structure

Details Elevated local interconnect and contact structure Elevated local interconnect and contact structure

1997-01-31

2000-04-25

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438630, 438651, H01L 21283

Patent

active

06054385&

ABSTRACT:
A semiconductor process in which a local interconnect, formed above a first transistor level, is connected to the first transistor level through a self-aligned and low resistivity contact structure. A semiconductor substrate is provided and a first transistor level formed on an upper surface of the semiconductor substrate. The first transistor level includes a first transistor. A local interconnect is then formed over the first transistor level. The local interconnect is vertically displaced above the first transistor level such that the local interconnect may traverse a gate of the first transistor without contacting the gate. A contact structure is then formed to connect the first source/drain structure of the first transistor with the local interconnect. The contact structure includes a first self-aligned silicide at an interface between the contact structure and the first source/drain region and further includes a second self-aligned silicide at an interface between the contact structure and the local interconnect.

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Jaeger, Richard C. Introduction to Microelectronic Fabrication. vol. 5 Addison Wesley Publishing Company. pp. 133, 142, May 1993.

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