Elevated edge-protected bonding pedestals for semiconductor devi

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357 65, 357 71, H01L 2348, H01L 2944, H01L 2952

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active

043946780

ABSTRACT:
An elevated bonding pad suitable for wire or lead frame attachment and having an insulating layer completely over its outer periphery. The structure simplifies the processing required to form an elevated bonding pad, and serves to protect the periphery against bonding damage, and provides protection against corrosion of the bonded encapsulated semiconductor unit.

REFERENCES:
patent: 3345210 (1967-10-01), Wilson
patent: 3496428 (1970-02-01), de Volder
patent: 3585461 (1971-06-01), Eynon
patent: 3617818 (1971-11-01), Fuller
patent: 3629669 (1971-12-01), Kauppila
patent: 3759798 (1973-09-01), Graff et al.
patent: 3761309 (1973-09-01), Schmitter et al.
patent: 3840398 (1974-10-01), Sonntag
patent: 3918032 (1975-11-01), Nicolaides
patent: 3935635 (1976-02-01), Botzenhardt
patent: 3942187 (1976-03-01), Gelsing et al.
patent: 4005455 (1977-01-01), Watrous et al.
patent: 4151545 (1979-04-01), Schnepf et al.
patent: 4164461 (1979-08-01), Schilling
patent: 4267012 (1981-05-01), Pierce et al.

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